No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intersil Corporation |
Radiation Hardened Quad 2-Input NAND Gate • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 MEV-cm2/mg • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Condi |
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Intersil Corporation |
Radiation Hardened Quad 2-Input NOR Gate |
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Intersil Corporation |
Radiation Hardened 10-to-4 Line Priority Encoder • QML Qualified Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . . |
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Intersil Corporation |
Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver • Devices QML Qualified in Accordance with MIL-PRF38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96707 and Intersil’ QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose >300K RAD (Si) • Single Event Upset |
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Intersil Corporation |
Radiation Hardened Octal Transparent Latch • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 MEV-cm2/mg • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Condi |
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Intersil Corporation |
Radiation Hardened Octal D Flip-Flop • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 MEV-cm2/mg • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Condi |
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Intersil Corporation |
Radiation Hardened Quad 2-Input NAND Gate Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . |
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Intersil Corporation |
Radiation Hardened Hex Inverter |
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Intersil Corporation |
Radiation Hardened Hex Inverter |
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Intersil Corporation |
Radiation Hardened Quad 2-Input AND Gate • QML Qualified Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . |
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Intersil Corporation |
Radiation Hardened Triple Three-Input NAND Gate • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 • Dose Rate Upset >1011 MEV-cm2 /mg RAD (Si)/s, 20ns Pulse -55oC +125oC • Latch-Up Free |
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Intersil Corporation |
Radiation Hardened Dual J-K Flip-Flop • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96704 and Intersil’sIntersil QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . . |
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Intersil Corporation |
Radiation Hardened Triple 3-Input AND Gate • QML Qualified Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under any Conditions - Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD (Si) - SEU Immunity . . . . . . . |
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Intersil Corporation |
Radiation Hardened 3-to-8 Line Decoder/Demultiplexer • QML Qualified Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . |
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Intersil Corporation |
Radiation Hardened Quad 2-Input Non-Inverting Multiplexer • QML Qualified Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . |
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Intersil Corporation |
Radiation Hardened 4-Bit Synchronous Counter • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96706 and Intersil’ QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . . . . . . . |
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Intersil Corporation |
Radiation Hardened Hex D-Type Flip-Flop • QML Qualified Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . . |
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Intersil Corporation |
Radiation Hardened Triple 3-Input NOR Gate • QML Qualified Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . . |
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Intersil Corporation |
Radiation Hardened Dual J-K Flip-Flop |
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Intersil Corporation |
Radiation Hardened Quad Buffer • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96705 and Intersil’s QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . . . . . . |
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