logo

Intersil Corporation 766 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
7660S

Intersil Corporation
ICL7660S

• Guaranteed Lower Max Supply Current for All Temperature Ranges
• Wide Operating Voltage Range 1.5V to 12V
• 100% Tested at 3V
• No External Diode Over Full Temperature and Voltage Range
• Boost Pin (Pin 1) for Higher Switching Frequency
• Guarantee
Datasheet
2
7660CBA

Intersil Corporation
CMOS Voltage Converters

• Simple Conversion of +5V Logic Supply to ±5V Supplies
• Simple Voltage Multiplication (VOUT = (-) nVIN)
• Typical Open Circuit Voltage Conversion Efficiency 99.9%
• Typical Power Efficiency 98%
• Wide Operating Voltage Range - ICL7660 . . . . . . .
Datasheet
3
HUF76609D3S

Intersil Corporation
N-Channel MOSFET

• Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com
• Peak Current vs P
Datasheet
4
HUF76619D3S

Intersil Corporation
N-Channel MOSFET

• Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com
• Peak Current
Datasheet
5
HUF76629D3

Intersil Corporation
N-Channel MOSFET

• Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electriecal Models - Spice and SABER Thermal Impedance Models - www.semi.harris.com
• Peak Current v
Datasheet
6
HUF76645P3

Intersil Corporation
N-Channel MOSFET
JEDEC TO-263AB DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V - rDS(ON) = 0.015Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.I
Datasheet
7
AN5766

Intersil Corporation
8MHz Power Amps

• Incorporating 4 values changeover output circuit
• Incorporating 5 V constant voltage output
• Incorporating reset function
• Incorporating current protection and thermal protection circuit (0.83) 2.54 0.60 7 (0.30) 1.45±0.20 22.00±0.30 1.80±
Datasheet
8
HFA3766

Intersil Corporation
400MHz AGC Quadrature IF Modulator/Demodulator
all the necessary blocks for baseband modulation and demodulation of I and Q signals. It has a two stage integrated AGC IF amplifier with 82dB of voltage gain and 76dB of gain control range. Baseband antialiasing is integrated into the design. Four fi
Datasheet
9
HUF76609D3

Intersil Corporation
N-Channel MOSFET

• Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com
• Peak Current vs P
Datasheet
10
HUF76619D3

Intersil Corporation
N-Channel MOSFET

• Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com
• Peak Current
Datasheet
11
HUF76629D3S

Intersil Corporation
N-Channel MOSFET

• Ultra Low On-Resistance - rDS(ON) = 0.052Ω, VGS = 10V - rDS(ON) = 0.054Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electriecal Models - Spice and SABER Thermal Impedance Models - www.semi.harris.com
• Peak Current v
Datasheet
12
HUF76633P3

Intersil Corporation
N-Channel MOSFET
JEDEC TO-263AB DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.I
Datasheet
13
HUF76633S3S

Intersil Corporation
N-Channel MOSFET
JEDEC TO-263AB DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.I
Datasheet
14
HUF76639P3

Intersil Corporation
N-Channel MOSFET
JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Ther
Datasheet
15
HUF76645S3S

Intersil Corporation
N-Channel MOSFET
JEDEC TO-263AB DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V - rDS(ON) = 0.015Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.I
Datasheet
16
HI5766

Intersil Corporation
A/D Converter

• Sampling Rate . . . . . . . . . . . . . . . . . . . . . . . . . . 60 MSPS
• 8.3 Bits at fIN = 10MHz
• Low Power at 60 MSPS . . . . . . . . . . . . . . . . . . . . 260mW
• Wide Full Power Input Bandwidth. . . . . . . . . . . . . 250MHz
• On Chip Sam
Datasheet
17
HUF76639S3S

Intersil Corporation
N-Channel MOSFET
JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Ther
Datasheet



logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad