Intersil Corporation 20N Hoja de datos

No.	parte #	Fabricante	Descripción
1	20N60C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
2	HGTG20N50C1D	Intersil Corporation	N-Channel IGBT • 20A, 500V • Latch Free Operation • Typical Fall Time < 500ns • High Input Impedance • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSF
3	G20N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i
4	HGTH20N40E1	Intersil Corporation	N-Channel IGBT • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protection Circuits HGTP-TYPES JEDEC TO-220AB
5	HGTH20N50C1	Intersil Corporation	N-Channel IGBT • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protection Circuits HGTP-TYPES JEDEC TO-220AB
6	HGTG20N100D2	Intersil Corporation	N-Channel IGBT • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
7	HGTG20N120CND	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe
8	HGTG20N120E2	Intersil Corporation	N-Channel IGBT • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. T
9	HGTP20N60A4	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
10	RFD20N03SM	Intersil Corporation	20A/ 30V/ 0.025 Ohm/ N-Channel Power MOSFETs • 20A, 30V • rDS(ON) = 0.025Ω • Temperature Compensating PSPICE® Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface
11	G20N100D2	Intersil Corporation	HGTG20N100D2 • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
12	HGTG20N120	Intersil Corporation	N-Channel IGBT • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. T
13	HGTG20N120C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ide
14	HGTG20N120CN	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe
15	HGTG20N60A4	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
16	HGTG20N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
17	HGTG20N60B3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used i
18	HGTG20N60C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
19	HGTG20N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i
20	HGTH20N40C1	Intersil Corporation	N-Channel IGBT • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protection Circuits HGTP-TYPES JEDEC TO-220AB