Intersil 2N6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HGT1S12N60A4DS	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
2	HGTP12N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
3	2N6796	Intersil Corporation	N-Channel Power MOSFET • 8A, 100V • rDS(ON) = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER 2N6796 PACKAGE TO-205AF BRAND 2N6796
4	HGTP12N60A4D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
5	HGT1S12N60B3S	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
6	HGTA32N60E2	Intersil Corporation	32A/ 600V N-Channel IGBT • 32A, 600V • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device ha
7	HGTG12N60D1	Intersil Corporation	N-Channel IGBT • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transist
8	HGTG32N60E2	Intersil Corporation	N-Channel IGBT • 32A, 600V • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and b
9	HGTP12N60C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
10	2N6976	Intersil Corporation	N-Channel IGBTs • 5A, 400V and 500V • VCE(ON) 2V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance GATE Applications • Power Supplies • Motor Drives • Protection Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Descr
11	HGT1S12N60A4S	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
12	HGT1S12N60C3S	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
13	HGTG12N60A4	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
14	HGTG12N60A4D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
15	HGTP12N60A4	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
16	HGTP12N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is
17	HGTP12N60D1	Intersil Corporation	N-Channel IGBT • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss www.DataSheet4U.com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar trans
18	2N6975	Intersil Corporation	N-Channel IGBTs • 5A, 400V and 500V • VCE(ON) 2V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance GATE Applications • Power Supplies • Motor Drives • Protection Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Descr
19	2N6977	Intersil Corporation	N-Channel IGBTs • 5A, 400V and 500V • VCE(ON) 2V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance GATE Applications • Power Supplies • Motor Drives • Protection Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Descr
20	2N6978	Intersil Corporation	N-Channel IGBTs • 5A, 400V and 500V • VCE(ON) 2V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance GATE Applications • Power Supplies • Motor Drives • Protection Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Descr