International Rectifier IRL Hoja de datos

No.	parte #	Fabricante	Descripción
1	LL014N	International Rectifier	IRLL014N mount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V
2	IRLB3034PBF	International Rectifier	40V Single N-Channel HEXFET Power MOSFET imited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or
3	IRLB8314PbF	International Rectifier	Power MOSFET n Maximum Power Dissipation Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Thermal Resistance Symbol Parameter RJC RCS Ju
4	IRL3705N	International Rectifier	Power MOSFET rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 
5	IRLZ44N	International Rectifier	Power MOSFET VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Ra
6	IRLML6402	International Rectifier	HEXFET Power MOSFET nd power dissipation are the best available. Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pul
7	LL024N	International Rectifier	IRLL024N in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Dra
8	IRLB3813PBF	International Rectifier	Power MOSFET lat Greased Surface fJunction-to-Ambient Notes through are on page 9 www.irf.com Max. 30 ± 20 h260 h190 1050 230 120 1.6 -55 to + 175 300 (1.6mm from case) x x10lb in (1.1N m) Units V A W W/°C °C Typ. – – – 0.50 – – – Max. 0.64 – – – 62 Units °C/
9	IRLML2402GPBF	International Rectifier	POWER MOSFET rds. Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Ga
10	IRL3705ZL	International Rectifier	AUTOMOTIVE MOSFET
11	IRLI3615	International Rectifier	HEXFET Power MOSFET duct. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V
12	IRL540	International Rectifier	Power MOSFET
13	IRLML6302	International Rectifier	HEXFET Power MOSFET cs and PCMCIA cards. G1 S2 IRLML6302PbF HEXFET® Power MOSFET VDSS = -20V 3D RDS(on) = 0.60Ω Micro3TM Base Part Number IRLML6302TRPbF Package Type Micro3™ (SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML630
14	IRLML2402	International Rectifier	HEXFET Power MOSFET environments such as portable electronics and PCMCIA cards. Micro3 Absolute Maximum Ratings Parameter I D @ TA = 25°C I D @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V
15	IRL3803	International Rectifier	Power MOSFET rain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage
16	IRLI3705N	International Rectifier	HEXFET Power MOSFET g. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating
17	IRLR3303PBF	International Rectifier	HEXFET Power MOSFET TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derat
18	IRLR2908	International Rectifier	POWER MOSFET l l l l l l HEXFET® Power MOSFET D IRLR2908 IRLU2908 VDSS = 80V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G S RDS(on) = 28mΩ ID =
19	IRLR7843CPBF	International Rectifier	POWER MOSFET Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ. Max. 1.05 50 110 Units °C/W gÃ – – – – – – – – – Notes through are on page 11 www.irf.com 1 05/31/06 IRLR/U7843CPbF Static @ TJ = 25
20	IRLML6401PBF	International Rectifier	HEXFET Power MOSFET o extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. www.DataSheet4U.com Micro3 ™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ T