International Rectifier IRH Hoja de datos

No.	parte #	Fabricante	Descripción
1	IRHMJ57160	International Rectifier	(IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Cera
2	IRHM93130	International Rectifier	RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12
3	IRHMB57260SE	International Rectifier	RADIATION HARDENED POWER MOSFET n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings P
4	IRHM53160	International Rectifier	(IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE
5	IRHNKC67C30	International Rectifier	Radiation Hardened Power MOSFET • Low RDS(on) • Fast switching • Single event effect (SEE) hardened • Low total gate charge • Simple drive requirements • Hermetically sealed • Enhanced ceramic package for direct to pcb mounting • Light weight • Surface mount with low CTE mismatch t
6	IRHN7230	International Rectifier	N-Channel Transistor s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions
7	IRHNJ54Z30	International Rectifier	RADIATION HARDENED POWER MOSFET n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pa
8	IRHY8130CM	International Rectifier	RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V
9	IRHMS597Z60	International Rectifier	RADIATION HARDENED POWER MOSFET
10	IRHMS9A7264	International Rectifier	Radiation Hardened Power MOSFET  Single event effect (SEE) hardened (up to LET of 88.2 MeV ·cm2/mg)  Low RDS(on)  Fast switching  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  ESD rating: Class
11	IRHN2C50SE	International Rectifier	N-Channel Transistor s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Av
12	IRHN7C50SE	International Rectifier	N-Channel Transistor s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Av
13	IRHN7450	International Rectifier	(IRHN7450 / IRHN8450) HEXFET TRANSISTOR n n n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditi
14	IRHN7450SE	International Rectifier	TRANSISTOR N-CHANNEL s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions
15	IRHNA58260	International Rectifier	N-CHANNEL POWER MOSFET n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pa
16	IRHY3130CM	International Rectifier	RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V
17	IRHY53230CM	International Rectifier	RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS
18	IRHY57034CM	International Rectifier	RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C
19	IRH7230	International Rectifier	RADIATION HARDENED POWER MOSFET THRU-HORE ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V
20	IRHM7064	International Rectifier	(IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions