No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
soft recovery diode Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Con |
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International Rectifier |
Soft Recovery Diode • • • • Fast Recovery time characteristic Eletrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Description This SOT-227 modules with FRED rectifier are available in two basic configur |
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International Rectifier |
Soft Recovery Diode • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode VR = 400V VF(typ.) = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/µs D |
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International Rectifier |
Ultrafast/ Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF(typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A 3 ANODE 2 4 2 Benefi |
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International Rectifier |
Ultrafast/ Soft Recovery Diode HFA200MD40C Ultrafast, Soft Recovery Diode VR = 400V VF (typ.) = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.) = 270A/µs LUG LUG LUG TERMINAL TERMINAL TERMINAL CATHODE ANODE 2 ANODE 1 TM Reduced RF |
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International Rectifier |
Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF(typ.)* = 1.4V IF(AV) = 8.0A Qrr (typ.)= 65nC IRRM = 3.5A 3 ANODE 2 4 2 Benef |
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International Rectifier |
SOFT RECOVERY DIODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free TM Ultrafast, Soft Recovery Diode (K) BASE + 2 VR = 600V VF = 1.8V Qrr * = 40nC Reduced RFI and EMI Reduced Power Loss in |
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International Rectifier |
Soft Recovery Diode • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode VR = 400V VF(typ.) = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/µs D |
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International Rectifier |
Ultrafast/ Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF = 1.8V 4 2 Qrr * = 40nC 3 ANODE 2 Benefits • Reduced RFI and EMI |
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International Rectifier |
Ultrafast/ Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode (K) BASE + 2 VR = 600V VF = 1.8V Qrr * = 40nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Dio |
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International Rectifier |
Ultrafast/ Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE BASE CATHODE VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A 3 ANODE 2 4 2 trr (typ.) = 28ns |
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International Rectifier |
Ultrafast/ Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF(typ.)* = 1.4V IF(AV) = 8.0A Qrr (typ.)= 65nC IRRM = 5.0A 3 ANODE 2 |
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International Rectifier |
HEXFRED Ultrafast/ Soft Recovery Diode • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE VR = 600V VF = 1.5V a d Qrr * = 1200nC di(rec)M/dt * = 240A/µs * 125°C BASE CATHODE Description H |
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International Rectifier |
Ultrafast Soft Recovery Diode • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduc |
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International Rectifier |
Ultrafast/ Soft Recovery Diode Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF(typ.) = 1V IF(AV) = 240A Qrr (typ.) = 290nC |
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International Rectifier |
Ultrafast/ Soft Recovery Diode TM Ultrafast, Soft Recovery Diode VR = 600V VF (typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/µs Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed |
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International Rectifier |
SOFT RECOVERY DIODE |
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International Rectifier |
Soft Recovery Diode HFA240NJ40D Anode 1 Cathode 2 TM Ultrafast, Soft Recovery Diode V R = 400V VF(typ.) = 1V IF(AV) = 240A Qrr (typ.) = 290nC IRRM(typ.) = 7.5A trr(typ.) = 50ns di(rec)M/dt (typ.) = 270A/µs Reduced RFI and EMI Reduced Snubbing Extensive Chara |
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International Rectifier |
Soft Recovery Diode Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode (ISOLATED BASE) 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 V R = 600V V F(typ.) = 1.1V IF(AV) = 60A Qrr (typ.) = 200nC IRRM |
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International Rectifier |
SOFT RECOVERY DIODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation R |
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