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International Rectifier |
IRFR9024N a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation L |
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International Rectifier |
IRFR9024 |
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International Rectifier |
Power MOSFET l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * |
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International Rectifier |
HEXFET POWER MOSFET eter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sing |
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International Rectifier |
Power MOSFET TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse A |
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International Rectifier |
P-Channel Transistor |
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International Rectifier |
P-Channel Transistor |
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International Rectifier |
(IRFU9020 / IRFU9022) P-Channel Transistors |
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International Rectifier |
(IRFU9020 / IRFU9022) P-Channel Transistors |
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International Rectifier |
Power MOSFET Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Fact |
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International Rectifier |
Power MOSFET ETS www.irf.com 7 IRFR/U9024NCPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAS ! XDUCÃ6TT@H7G` GPUÃ8P9@Ã !"# 6TT@H7G@9ÃPIÃXXÃ %Ã! DIÃUC@Ã6TT@ |
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International Rectifier |
HEXFET Power MOSFET rf.com 1 12/06/04 IRFR/U9N20DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Volta |
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International Rectifier |
HEXFET Power MOSFET ckage Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indica |
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International Rectifier |
Power MOSFET kage Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" in assembly line position ind |
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International Rectifier |
Power MOSFET (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WIT H ASS EMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in ass embl |
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International Rectifier |
HEXFET POWER MOSFET = 5.0V for Logic Level and 3V Drive Devices Fig -14 For P Channel HEXFETS www.irf.com 7 www.DataSheet4U.com IRFR/U9024PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EX |
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International Rectifier |
HEXFET POWER MOSFET = 5.0V for Logic Level and 3V Drive Devices Fig -14 For P Channel HEXFETS www.irf.com 7 www.DataSheet4U.com IRFR/U9024PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EX |
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International Rectifier |
Power MOSFET bsolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Facto |
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Desde 2024. D4U Semiconductor.
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