International Rectifier FB3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FB31N20D	International Rectifier	IRFB31N20D Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes through are on page 11 www.irf.com 1 2/14/00 IRFB/IRFS/IRFSL31N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Bre
2	IRFB3306PBF	International Rectifier	Power MOSFET
3	IRFB3306GPbF	International Rectifier	Power MOSFET Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current dRepetitive Avalanche Ener
4	IRFB3307ZPBF	International Rectifier	HEXFET Power MOSFET to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EA
5	B31N20D	International Rectifier	IRFB31N20D Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes through are on page 11 www.irf.com 1 2/14/00 Datasheet pdf - http://www.DataSheet4U.net/ IRFB/IRFS/IRFSL31N20D Static @ TJ = 25°C (unless other
6	IRFB31N20D	International Rectifier	Power MOSFET ns °C Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes through are on page 11 www.irf.com 1 2/14/00 IRFB/IRFS/IRFSL31N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)
7	IRFB3307	International Rectifier	HEXFET Power MOSFET Thermally limited) Single Pulse Avalanche Energy ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient,
8	IRFB3607GPBF	International Rectifier	Power MOSFET , for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw d f x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ã e g Typ. – – – 0.50 – – –
9	IRFB33N15D	International Rectifier	Power MOSFET /ns °C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes through are on page 11 www.irf.com 1 6/29/00 IRFB/IRFS/IRFSL33N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown
10	IRFB3207ZGPbF	International Rectifier	HEXFET Power MOSFET Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics e EAS (Thermally limited) Single Pulse Avalanche Energy Ãd IAR Avalanche Current
11	IRFB31N20DPBF	International Rectifier	Power MOSFET Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies l Telecom 48V Input DC/DC Active Clamp Reset Forward Converter Notes through are on page 11 www.irf.com 1 3/1/04 IRFB/S/SL31N20DPbF Static @ TJ = 25°C (unless otherwise specified)
12	IRFB3307PbF	International Rectifier	HEXFET Power MOSFET rmally limited) IAR EAR eSingle Pulse Avalanche Energy ÃAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RJC Parameter kJunction-to-Case RCS RJA RJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient,
13	HFB32PA120C	International Rectifier	Ultrafast/ Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode per Leg 2 VR = 1200V VF(typ.) = 2.3V IF(AV) = 16A Qrr (typ.)= 260nC Benefits • Reduced RFI and EMI • Red
14	IRFB3077PBF	International Rectifier	Power MOSFET TG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Ava
15	IRFB38N20DPBF	International Rectifier	Power MOSFET case ) 10 lbf •in (1.1N •m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient are on page 11 Typ. – – – 0.50 – –
16	IRFB3004PBF	International Rectifier	Power MOSFET
17	IRFB3006PBF	International Rectifier	Power MOSFET Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
18	IRFB3607PBF	International Rectifier	Power MOSFET d 56 80 310 140 Units A W W/°C V °C 0.96 ± 20 -55 to + 175 300 10lb in (1.1N m) 120 46 14 x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Ã e mJ A mJ Repetitive Avalanche E
19	IRFB3004GPbF	International Rectifier	Power MOSFET ing Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw d f 340 240 195 1310 380 2.5 ± 20 4.4 -55 to + 175 300 10lbf in (1.1N m) W W/°C V V/ns °C x x Avalanche C
20	IRFB3206GPbF	International Rectifier	HEXFET Power MOSFET Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current dRepetitive Avalanche Energ