| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
IGBT POWER MODULE |
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International Rectifier |
Power MOSFET 5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Curre |
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International Rectifier |
LOW SIDE CHOPPER IGBT MTP • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation |
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International Rectifier |
Power MOSFET egundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2010 8 www.irf.com |
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International Rectifier |
IGBT POWER MODULE |
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International Rectifier |
LOW SIDE CHOPPER IGBT MTP • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation |
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International Rectifier |
IGBT POWER MODULE |
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International Rectifier |
IGBT POWER MODULE |
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International Rectifier |
CHOPPER LOW SIDE SWITCH IGBT INTAPAK |
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Desde 2024. D4U Semiconductor.
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