International Rectifier 2N6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	JANS2N6849	International Rectifier	P-CHANNEL TRANSISTORS  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1C per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inver
2	JANTXV2N6847	International Rectifier	POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A) s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TST
3	JANTX2N6794	International Rectifier	POWER MOSFET N-CHANNEL n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous D
4	JANTXV2N6794U	International Rectifier	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS ! ! ! ! ! ! ! ! Surface Mount Small Footprint Alternative to TO-39 Package Hermetically Sealed Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VG
5	JANTX2N6849U	International Rectifier	100V P-CHANNEL MOSFET  Surface Mount  Small Footprint  Alternative to TO-39 Package  Hermetically Sealed  Dynamic dv/dt Rating  Avalanche Energy Rating  Simple Drive Requirements  Light Weight  ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum R
6	JANTX2N6760	International Rectifier	POWER MOSFET N-CHANNEL n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Dr
7	JANTX2N6806	International Rectifier	P-CHANNNEL TRANSISTORS n RepetitiveAvalanche Ratings n Dy
8	JANTX2N6806	International Rectifier	P-CHANNNEL TRANSISTORS n RepetitiveAvalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC =
9	JANTX2N6845	International Rectifier	POWER MOSFET s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TST
10	JANTX2N6851	International Rectifier	POWER MOSFET s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TST
11	JANTXV2N6756	International Rectifier	N-Channel Transistor  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Curr
12	JANTXV2N6760	International Rectifier	POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.00ohm/ Id=5.5A) n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR E
13	JANTXV2N6764	International Rectifier	TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A) n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR E
14	JANTXV2N6764	International Rectifier	POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.055ohm/ Id=38A) n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR E
15	JANTXV2N6786	International Rectifier	POWER MOSFET N-CHANNEL n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC
16	JANTXV2N6788	International Rectifier	N-Channel Transistor  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inver
17	JANTXV2N6790	International Rectifier	N-Channel MOSFET  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inver
18	JANTXV2N6802	International Rectifier	POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A) s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG
19	JANTXV2N6849	International Rectifier	P-Channel MOSFET  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1C per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inver
20	2N686	International Rectifier	25 AND 35 AMP RMS SCR