| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
InternationalRectifier |
PHASE CONTROL SCR The 25TTS..FP SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical |
|
|
|
|
InternationalRectifier |
PHASE CONTROL SCR The 25TTS..S new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical appl |
|
|
|
|
International Rectifier |
Ultrafast/ Soft Recovery Diode TM Ultrafast, Soft Recovery Diode VR = 600V VF (typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/µs Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed |
|
|
|
|
InternationalRectifier |
PHASE CONTROL SCR The 25TTS..S new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical appl |
|
|
|
|
InternationalRectifier |
PHASE CONTROL SCR The 25TTS..FP SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical |
|
|
|
|
InternationalRectifier |
PHASE CONTROL SCR The 25TTS..FP SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER ● High voltage (35 V.DC max.) ● RoHS compliance, Halogen free Specifications Size code B1S Category temperature range –55 °C to +105 °C Rated voltage range 16 V.DC to 35 V.DC Category voltage range 16 V.DC to 35 V.DC Rated capacitance range |
|
|
|
|
International Rectifier |
Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode Base Cathode 2 VR = 600V VF(typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(r |
|
|
|
|
International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET and Benefits Features Benefits Low RDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no |
|
|
|
|
International Rectifier |
Power MOSFET |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET and Benefits Features Low Thermal Resistance to PCB (< 2.3°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification |
|
|
|
|
International Rectifier |
Power MOSFET and Benefits • Fast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Higher Gate voltage threshold offers improved noise immunity. S G D-Pak IRFR825TRPbF Absolute |
|
Desde 2024. D4U Semiconductor.
|