| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
HEXFET Power MOSFET ingle Transistor Flyback Notes through are on page 9 www.irf.com 1 12/03/04 IRFR/U1N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C junction temperature. Typical applications are in switching power |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6660DT1 Doubler Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage c |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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International Rectifier |
SCHOTTKY RECTIFIER TO-203AB (DO-5) The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C junction temperature. Typical applications are |
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International Rectifier |
SMPS MOSFET gh are on page 9 www.irf.com 1 3/7/03 IRFR/U1N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-t |
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International Rectifier |
HEXFET Power MOSFET ingle Transistor Flyback Notes through are on page 9 www.irf.com 1 12/03/04 IRFR/U1N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6660DT1 Doubler Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage c |
|
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|
|
International Rectifier |
SCHOTTKY RECTIFIER The 1N6660DT1 Doubler Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage c |
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|
International Rectifier |
SMPS MOSFET gh are on page 9 www.irf.com 1 3/7/03 IRFR/U1N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-t |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C junction temperature. Typical applications are in switching power |
|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER TO-203AB (DO-5) The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C junction temperature. Typical applications are |
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Desde 2024. D4U Semiconductor.
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