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International Rectifier |
Power MOSFET 3.7 ± 30 19 -55 to + 150 300 10 lbf •in (1.1N •m) Units A W W/°C V V/ns www.DataSheet4U.com °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode F |
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Pan Jit International |
SCHOTTKY BARRIER RECTIFIERS • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,free wheeling ,a |
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International Rectifier |
150AMP AVG SILICON RECTIFIER DIODES |
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International Rectifier |
SMPS MOSFET ansistor Forward l Half & Full Bridge l Power Factor Correction Boost Notes through are on page 8 www.irf.com 1 11/11/03 IRFB11N50APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Sourc |
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International Rectifier |
Power MOSFET ard Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage S |
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International Rectifier |
HEXFET POWER MOSFET THRU-HOLE n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Lo |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Lo |
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Pan Jit International |
SCHOTTKY BARRIER RECTIFIERS • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,free wheeling ,a |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N5817 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Low profil |
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International Rectifier |
Power MOSFET ard Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage S |
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International Rectifier |
HEXFET Power MOSFET ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 31 – |
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International Rectifier |
IRFB11N50A Two Transistor Forward Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Sourc |
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International Rectifier |
HEXFET Power MOSFET D E Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 8 www |
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Pan Jit International |
SCHOTTKY BARRIER RECTIFIERS • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,free wheeling ,a |
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Desde 2024. D4U Semiconductor.
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