International Rectifier 19T Hoja de datos

No.	parte #	Fabricante	Descripción
1	JANSR2N7519T3	International Rectifier	30V P-Channel MOSFET  Single Event Effect (SEE) Hardened  Fast Switching  Low RDS(on)  Low Total Gate Charge  Simple Drive Requirements  Hermetically Sealed  Electrically Isolated  Ceramic Eyelets  Light Weight  ESD Rating: Class 1C per MIL-STD-750, Method 1020
2	19TQ015	International Rectifier	SCHOTTKY RECTIFIER Units A V A V °C The 19TQ015 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125° C junction tempe
3	19TQ015S	International Rectifier	SCHOTTKY RECTIFIER Units A V A V °C The 19TQ015 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125° C junction tempe
4	IRF6619TRPbF	International Rectifier	DirectFET Power MOSFET ower applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to m