International Rectifier 16S Hoja de datos

No.	parte #	Fabricante	Descripción
1	8EWS16S	International Rectifier	SURFACE MOUNTABLE INPUT RECTIFIER DIODE The 8EWS..S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature. The High Reverse Voltage range available
2	SEMiX291D16s	Semikron International	Bridge Rectifier Module • Terminal height 17 mm • Chips soldered directly to isolated substrate • UL recognised file no. E63532 4000 4800 Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6
3	SEMiX241DH16s	Semikron International	Bridge Rectifier Module • Terminal height 17 mm • Chips soldered directly to isolated substrate • UL recognised file no. E63532 (dv/dt)cr Tj Module Tstg Visol Characteristics Symbol Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Module Rth(c-s) Ms Mt
4	16TTS16S	International Rectifier	SURFACE MOUNTABLE PHASE CONTROL SCR The 16TTS..SSAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. VT < 1.4V
5	16SCYQ030C	International Rectifier	SCHOTTKY RECTIFIER The 16SCYQ030C center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated TO-257AA package. The device's forward voltage drop and reverse leakage current
6	16SCYQ045C	International Rectifier	SCHOTTKY RECTIFIER The 16SCYQ045C center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated TO-257AA package. The device's forward voltage drop and reverse leakage current
7	16SCYQ060C	International Rectifier	SCHOTTKY RECTIFIER Characteristics 1N7059CCT3 Units IF(AV) VRRM (Per Leg) 16 A 60 V IFSM @ tp = 8.3ms half-sine (Per Leg) 125 A VF @16Apk, TJ =125°C (Per Leg) 0.79 V TJ,Tstg Operating and storage -65 to 150 °C The 1N7059CCT3 center tap Schottky rectifier ha
8	IRL3716S	International Rectifier	HEXFET Power MOSFET Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. – – – 0.50 – – – – – – Max. 0.72 – – – 62 40 Units °C/W Notes through are on page 11 www.irf.com 1 10/8/04 IRL3716/3716S/3716L Static @ TJ = 2
9	IR3316S	International Rectifier	Low EMI Current Sense High Side Switch • • • • • • • • Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature shutdown Switching time optimized for low EMI Reverse battery protection Product Summary Rds(on) 7 mΩ max.
10	IR3316SPBF	International Rectifier	LOW EMI CURRENT SENSE HIGH SIDE SWITCH • • • • • • • • Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature shutdown Switching time optimized for low EMI Reverse battery protection Product Summary Rds(on) 7 mΩ max.
11	AUIRS2016S	International Rectifier	High Side Driver • • • • • • • • Leadfree, RoHS compliant Automotive qualified* One high side output and internal low side Vs recharge. CMOS Schmitt trigger inverted input with pull up resistor CMOS Schmitt trigger inverted reset with pull down resistor 5V compatible
12	SEMIX302KT16S	Semikron International	Rectifier Thyristor Module • Terminal height 17 mm • Chips soldered directly to isolated substrate Visol Characteristics Symbol Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sin
13	SEMIX341D16S	Semikron International	Bridge Rectifier Module • Terminal height 17 mm • Chips soldered directly to isolated substrate Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w Conditions Tj = 25 °C, IF = 400 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode
14	IRL3716SPbF	International Rectifier	Power MOSFET rameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. – – – 0.50 – – – – – – Max. 0.72 – – – 62 40 Units °C/W Notes through are on page 11 www.irf.com 1 6/22/04 IRL3716/3716S/3716L
15	16SYJQ045C	International Rectifier	SCHOTTKY RECTIFIER Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 16Apk, TJ =125°C Limits 16 45 250 0.52 Units The 16SYJQ045C Schottky rectifier has been expressly designed to meet the rigorous requirements of HiRel A environments. It is packaged in th
16	16SYQ045C	International Rectifier	SCHOTTKY RECTIFIER The 16SYQ045C Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated TO-257AA ceramic package. The device's forward voltage drop and reverse leakage current are
17	SEMIX141KT16S	Semikron International	Rectifier Thyristor • Terminal height 17 mm • Chips soldered directly to isolated substrate Typical Applications* • Input Bridge Rectifier for AC/DC motor control • Power supply Absolute Maximum Ratings Symbol Conditions Chip IT(AV) sinus 180° ITRMS ITSM 10 ms i2
18	AUIR3316S	International Rectifier	LOW EMI CURRENT SENSE HIGH SIDE SWITCH         Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature shutdown Switching time optimized for low EMI Reverse battery protection Product Summary Rds(on) 7 m max.
19	SEMIX191KD16S	Semikron International	Rectifier Diode Terminal height 17 mm Chips soldered directly to isolated substrate Typical Applications* • Input Bridge Rectifier for AC/DC motor control • Power supply Absolute Maximum Ratings Symbol Conditions Recitifier Diode IFAV sin. 180° IFSM 10 ms i2
20	SEMIX302KD16S	Semikron International	Rectifier Diode Module • Terminal height 17 mm • Chips soldered directly to isolated substrate Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5 * 9,81 K/W