No. | parte # | Fabricante | Descripción | Hoja de Datos |
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International Rectifier |
SCHOTTKY RECTIFIER The 125NQ015 high current Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 100 °C junction t |
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International Rectifier |
CURRENT SENSE HIGH SIDE SWITCH Suitable for 24V systems Over current shutdown Over temperature shutdown Current sensing Active clamp Reverse circulation immunization Optimized Turn On/Off for EMI Reverse battery protection (Mosfet on) Applications 75W Filament la |
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International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 25A |
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International Rectifier |
Radiation Hardended Ultra Low Dropout Fixed Positive Linear Regulator n Silicon On Insulator (SOI) CMOS Regulator IC, CMOS Latch-Up Immune, Inherently Rad Hard n Total Dose Capability up to 300Krads(Si) (Condition A); Tested to 500Krad (Si) n ELDRS up to 100Krad(Si) (Condition D) n SEU Immune up to LET = 80 MeV*cm2/mg |
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International Rectifier |
Radiation Hardended Ultra Low Dropout Fixed Positive Linear Regulator n Silicon On Insulator (SOI) CMOS Regulator IC, CMOS Latch-Up Immune, Inherently Rad Hard n Total Dose Capability up to 300Krads(Si) (Condition A); Tested to 500Krad (Si) n ELDRS up to 100Krad(Si) (Condition D) n SEU Immune up to LET = 80 MeV*cm2/mg |
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International Rectifier |
Radiation Hardended Ultra Low Dropout Fixed Positive Linear Regulator n Silicon On Insulator (SOI) CMOS Regulator IC, CMOS Latch-Up Immune, Inherently Rad Hard n Total Dose Capability up to 300Krads(Si) (Condition A); Tested to 500Krad (Si) n ELDRS up to 100Krad(Si) (Condition D) n SEU Immune up to LET = 80 MeV*cm2/mg |
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International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry |
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International Rectifier |
CURRENT LIMITING SINGLE CHANNEL DRIVER • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 12 to 18V • Undervoltage lockout • Current detection and limiting loop to limit driven p |
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International Rectifier |
CURRENT LIMITING SINGLE CHANNEL DRIVER n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven p |
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International Rectifier |
Current Limiting Single Channel Driver • Floating channel designed for bootstrap operation www.DataSheet4U.com Product Summary VOFFSET IO+/VOUT VCSth ton/off (typ.) 500V max. 1A / 2A 12 - 18V 230 mV 150 & 150 ns • • • • • • • Fully operational to +500V Tolerant to negative transient vo |
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International Rectifier |
Current Limiting Single Channel Driver • Floating channel designed for bootstrap operation www.DataSheet4U.com Product Summary VOFFSET IO+/VOUT VCSth ton/off (typ.) 500V max. 1A / 2A 12 - 18V 230 mV 150 & 150 ns • • • • • • • Fully operational to +500V Tolerant to negative transient vo |
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International Rectifier |
CURRENT LIMITING SINGLE CHANNEL DRIVER • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 to 18V Undervoltage lockout Current detection and limiting loop to limit driven power t |
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International Rectifier |
Radiation Hardended Ultra Low Dropout Fixed Positive Linear Regulator n Silicon On Insulator (SOI) CMOS Regulator IC, CMOS Latch-Up Immune, Inherently Rad Hard n Total Dose Capability up to 300Krads(Si) (Condition A); Tested to 500Krad (Si) n ELDRS up to 100Krad(Si) (Condition D) n SEU Immune up to LET = 80 MeV*cm2/mg |
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