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International Rectifier |
(IR2110C / IR2113C) High and Low Side Driver in Die Wafer Form • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation Logic and power ground ±5V offset Fully operation |
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International Rectifier |
SCHOTTKY RECTIFIER This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in switching power supplies |
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International Rectifier |
SCHOTTKY RECTIFIER This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in switching power supplies |
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International Rectifier |
(IR2110C / IR2113C) High and Low Side Driver in Die Wafer Form • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation Logic and power ground ±5V offset Fully operation |
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International Rectifier |
SCHOTTKY RECTIFIER Units A V A V This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in switching |
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International Rectifier |
10 Amp Ultrafast Recovery / Dual Center Tap Rectifiers |
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International Rectifier |
10 Amp Ultrafast Recovery / Dual Center Tap Rectifiers |
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International Rectifier |
10 Amp Ultrafast Recovery / Dual Center Tap Rectifiers |
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International Rectifier |
10 Amp Ultrafast Recovery / Dual Center Tap Rectifiers |
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International Rectifier |
Power MOSFET n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ |
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International Rectifier |
Power MOSFET n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ |
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Desde 2024. D4U Semiconductor.
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