| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intel |
Boot Block Flash Memory ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V for fast production programming 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option — Reduces overall system power High Performance — 2.7 V – 3.6 V: 70 ns max acces |
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Intel |
Boot Block Flash Memory ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V for fast production programming 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option — Reduces overall system power High Performance — 2.7 V – 3.6 V: 70 ns max acces |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel |
Boot Block Flash Memory ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V for fast production programming 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option — Reduces overall system power High Performance — 2.7 V – 3.6 V: 70 ns max acces |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel Corporation |
Intel StrataFlash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod |
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Intel |
Boot Block Flash Memory ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V for fast production programming ■ 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option — Reduces overall system power ■ High Performance — 2.7 V – 3.6 V: 70 ns max access time ■ Opti |
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Desde 2024. D4U Semiconductor.
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