| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intel Corporation |
Wireless Flash Memory High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable |
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Intel |
Wireless Flash Memory ■ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed — Burst and Page Mode in All Blocks and across All Partition Boundaries — Burst Suspend Fea |
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Intel Corporation |
(GE28FxxxKx) Intel StrataFlash Memory (J3) Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities — 25 ns Asynchronous Page-Mode Reads, 8 Words Wide — 13 ns Synchronous Burst-Mode Reads, 8 or 16 Words Wide — 32-Word Write Buffer — Buffered Enhanced Factory Programmin |
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Intel Corporation |
(GE28FxxxKx) Intel StrataFlash Memory (J3) Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities — 25 ns Asynchronous Page-Mode Reads, 8 Words Wide — 13 ns Synchronous Burst-Mode Reads, 8 or 16 Words Wide — 32-Word Write Buffer — Buffered Enhanced Factory Programmin |
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Intel Corporation |
(GE28FxxxKx) Intel StrataFlash Memory (J3) Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities — 25 ns Asynchronous Page-Mode Reads, 8 Words Wide — 13 ns Synchronous Burst-Mode Reads, 8 or 16 Words Wide — 32-Word Write Buffer — Buffered Enhanced Factory Programmin |
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Intel Corporation |
Wireless Flash Memory ■ ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed — 4-, 8-, 16-, and Continuous-Word Burst Mode Reads — Burst and Page Mode Reads |
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Intel |
Wireless Flash Memory ■ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed — Burst and Page Mode in All Blocks and across All Partition Boundaries — Burst Suspend Fea |
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Intel |
Wireless Flash Memory ■ High Performance Read-While-Write/ ■ Architecture Erase — Multiple 4-Mbit Partitions — Burst frequency at 66 MHz — Dual Operation: RWW or RWE — 60 ns Initial Access Read Speed — 8KB parameter blocks — 11 ns Burst-Mode Read Speed — 64KB mai |
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Intel |
Wireless Flash Memory ■ High Performance Read-While-Write/ ■ Architecture Erase — Multiple 4-Mbit Partitions — Burst frequency at 66 MHz — Dual Operation: RWW or RWE — 60 ns Initial Access Read Speed — 8KB parameter blocks — 11 ns Burst-Mode Read Speed — 64KB mai |
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Intel |
Wireless Flash Memory ■ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed — Burst and Page Mode in All Blocks and across All Partition Boundaries — Burst Suspend Fea |
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Intel |
3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim |
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Intel |
3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim |
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Intel |
3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim |
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Intel |
3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim |
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Intel |
Boot Block Flash Memory ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming ■ 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power ■ High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time ■ Optimized |
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Intel |
Boot Block Flash Memory ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming ■ 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power ■ High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time ■ Optimized |
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Intel |
Boot Block Flash Memory ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming ■ 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power ■ High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time ■ Optimized |
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Intel |
Boot Block Flash Memory ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming ■ 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power ■ High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time ■ Optimized |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel |
StrataFlash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Desde 2024. D4U Semiconductor.
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