Intel E28 Hoja de datos

No.	parte #	Fabricante	Descripción
1	DE28F800F3	Intel	3V Fast Book Block Flash Memory s s High Performance — Up to 50 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads — Asynchronous Page-Mode Reads SmartVoltage Technology — 3.0 V−3.6 V Read and Write Operations for Low Power Designs — 12 V VPP Fast Factory Pr
2	TE28F800B5	Intel	SMART 5 BOOT BLOCK MEMORY  Absolute Hardware-Protection for Boot Block  Write Lockout during Power Transitio
3	TE28F004BV	Intel	4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
4	TE28F004S3	Intel	SMART 3 FlashFile MEMORY  Absolute Protection with VPP = GND  Flexible Block Locking  Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options  Program Suspend to Read  Block Erase Suspend to Program  Block Erase Suspend to Read n Industry-Stan
5	TE28F008SA	Intel	8-MBIT (1-MBIT x 8) FlashFile MEMORY Erase Write Lockout during Power Transitions Y Industry Standard Packaging 40-Lead TSOP 44-Lead PSOP Y ETOX III Nonvolatile Flash Technology 12V Byte Write Block Erase Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile rea
6	TE28F800C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
7	TE28F400B5	Intel	SMART 5 BOOT BLOCK MEMORY  Absolute Hardware-Protection for Boot Block  Write Lockout during Power Transitio
8	TE28F400BV	Intel	4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
9	TE28F400CV	Intel	4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
10	TE28F400BX	Intel	4-MBIT BOOT BLOCK FLASH MEMORY 1 mA Typical ICC Active Current in Static Operation Y Very High-Performance Read 60 80 120 ns Maximum Access Time 30 40 40 ns Maximum Output Enable Time Y Low Power Consumption 20 mA Typical Active Read Current Y Reset Deep Power
11	E28F002BV	Intel	2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
12	TE28F002BV	Intel	2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
13	TE28F008SC	Intel	SmartVoltage FlashFile MEMORY  Absolute Protection with VPP = GND  Flexible Block Locking  Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options  Program Suspend to Read  Block Erase Suspend to Program  Block Erase Suspend to Read n Industry-Stan
14	TE28F008S3	Intel	SMART 3 FlashFile MEMORY  Absolute Protection with VPP = GND  Flexible Block Locking  Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options  Program Suspend to Read  Block Erase Suspend to Program  Block Erase Suspend to Read n Industry-Stan
15	TE28F008S5	Intel	SMART 5 FlashFile MEMORY  Absolute Protection with VPP = GND  Flexible Block Locking  Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options  Program Suspend to Read  Block Erase Suspend to Program  Block Erase Suspend to Read n Industry-Stan
16	TE28F002BX	Intel	2-MBIT BOOT BLOCK FLASH MEMORY 1 mA Typical ICC Active Current in Static Operation Y Hardware Data Protection Feature Erase Write Lockout during Power Transitions Y Very High-Performance Read 60 80 120 ns Maximum Access Time 30 40 40 ns Maximum Output Enable Time
17	TE28F320B3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim
18	TE28F640C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
19	TE28F128P30	Intel Corporation	(TE28FxxxP30) Strata Flash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod
20	GE28F640L18	Intel Corporation	Wireless Flash Memory High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable