| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intel Corporation |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim |
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Intel Corporation |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta |
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Intel Corporation |
(28FxxxJ3A) Intel StrataFlash Memory s s s s s High-Density Symmetrically-Blocked Architecture — 128 128-Kbyte Erase Blocks (128 M) — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) High Performance Interface Asynchronous Page Mode Reads — 110/25 ns Read Access T |
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Intel Corporation |
Intel StrataFlash Memory ■ ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buffer —6.8 µs per b |
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Intel Corporation |
Intel StrataFlash Memory ■ www.DataSheet4U.com ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write |
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Intel Corporation |
Numonyx Embedded Flash Memory ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read |
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Intel Corporation |
28F320C3BD ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time |
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Intel Corporation |
3 Volt Advanced+ Boot Block Flash Memory ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time |
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Intel Corporation |
Strata Flash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Intel Corporation |
(TE28FxxxJ3) Strata Flash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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Desde 2024. D4U Semiconductor.
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