Innogration MM1 Hoja de datos

No.	parte #	Fabricante	Descripción	Hoja de Datos
1	MM1001	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift Suitable Applications  2-30MHz (HF or Short wave communication)  30-88MHz (Ground communication)  54-88MHz (TV VHF I)  88-108MHz
2	MM10R5	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat