Innogration MK1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	MK1040VP	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operatin
2	MK1520C	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat
3	MK1518C	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat
4	MK1160VP	Innogration	High Power RF LDMOS FET  Avionics: Mode-S, TCAS,JTIDS,DME and TACAN  Thermally Enhanced Industry Standard Package  High Reliability Metallization Process  Excellent thermal Stability and Excellent Ruggedness  Co