Innogration MK0 Hoja de datos

No.	parte #	Fabricante	Descripción
1	MK0540	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat
2	MK0560VPX	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat
3	MK0160VPX	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range
4	MK0514	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Drain 12 Gate Sou