| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies |
SPI Driver |
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Infineon Technologies |
SPI Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
SPI Power Controller and Min. Value improved Parameter P_5.3.23: Max. Value improved Chapter 6.1: RDS(ON) graphs removed Chapter 6.1: RDS(ON) variation factor added Chapter 6.4: Description improved Figure 16: Content updated Chapter 6.4.4: Note added Chapter 7.1: Conte |
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Infineon Technologies |
SPI Power Controller and Min. Value improved Parameter P_5.3.23: Max. Value improved Chapter 6.1: RDS(ON) graphs removed Chapter 6.1: RDS(ON) variation factor added Chapter 6.4: Description improved Figure 16: Content updated Chapter 6.4.4: Note added Chapter 7.1: Conte |
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Infineon Technologies |
SPI Power Controller • 8 bit serial peripheral interface (daisy chain capable SPI) for control and diagnosis • CMOS compatible parallel input pins for each channel provide direct PWM operation • Selectable AND- / OR-combination for parallel inputs (PWM control) • Very lo |
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Infineon Technologies |
SPI Programmable H-Bridge • Programmable current limitation from 1.8 to 10.6 A typ. • Full path RDSon of 240 mΩ (typ. at Tj=25°C) • Operating battery supply voltage 4.5 V to 28 V • Operating logic supply voltage 4.4 to 5.25 V • Low standby current (8 µA typ.) • Logic inputs T |
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Infineon Technologies |
SPI70N10L SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 16 70 P-TO220-3-1 V m A Type SPP70N10L SPB70N10L SP |
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Infineon Technologies |
SPI Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon Technologies |
SPI07N60S5 • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) |
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Infineon Technologies |
SPI Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
SPI Power Controller • 16 bit serial peripheral interface for control and diagnosis • Integrated PWM generator • Integrated control for two external smart power switches • 3.3 V and 5 V compatible logic pins • Very low stand-by current • Enhanced electromagnetic compatib |
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Infineon Technologies |
SPI Power Controller • 8 bit serial peripheral interface (daisy chain capable SPI) for control and diagnosis • CMOS compatible parallel input pins for each channel provide direct PWM operation • Selectable AND- / OR-combination for parallel inputs (PWM control) • Very lo |
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Infineon Technologies |
SIPMOS Power-Transistor N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 170 10.3 P-TO220-3-1 V A m Type SPP10N10 SPB10N10 SPI10N10 Package P-TO220-3-1 P-TO263-3-2 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance SPP11N65C3,SPA11N65C3 SPI11N65C3 PG-TO262 V DS RDS(on) ID 650 V 0.38 Ω |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode 175°C operating temperature www.DataSheet4U.com Avalanche rated dv/dt rated 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N1 |
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Infineon Technologies |
Power-Transistor • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 55 6.6 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-07 SPB80N06S2-07 SPI80N06S2-07 Package P- TO |
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Infineon Technologies |
CoolMOSTM Power Transistor • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC TO-262-3-1 CoolMOS C |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG |
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Infineon Technologies |
SPI Driver |
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Desde 2024. D4U Semiconductor.
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