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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
SPP03N60C3 / SPD03N60C3 / SPA03N60C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated www.DataSheet4U.com • Extreme P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 dv/dt rated 1 P-TO220-3-31 2 3 • High peak current capability • Improved transcondu |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A • Periodic avalanche rated PG-TO220-F3P-31 PG-TO262- PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improv |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.6 7.6 • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance |
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Infineon Technologies |
Cool MOS Power Transistor DQGVWRUDJHWHPSHUDWXUH Reverse diode dv/dt 7) 6\PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$ ± ± 15 8QLW $ $ P- $ 9 : & V/ |
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Infineon Technologies |
Power Transistor J dv/dt 9DOXH 8QLW 633 63$ $ $ P- ± ± 15 $ 9 : & V/ns Rev. 3.1 3DJH 91126 6331& 63$1& 0D[LPXP5DWLQJV 3DUDPHWHU |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge V DS RDS(on) ID 650 V 0.6 Ω 7.3 A • Periodic avalanche rated PG-TO220-3 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated 2 • High peak current capability • Improved transconductanc |
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Infineon Technologies |
SPA07N60C2 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.6 7.3 P-TO220-3-1 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge Product Summary VDS RDS(on),max ID1) 600 V 0.22 W 20.7 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220-3-31 • High |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
Power Transistor /dt 9DOXH 8QLW 633 63$ $ $ P- ± ± 15 $ 9 : & V/ns Rev. 3.1 PDJH 2009-11-26 6331& 63$1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6R |
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Infineon Technologies |
Cool MOS& Power Transistor |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.6 7.3 P-TO220-3-1 |
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Desde 2024. D4U Semiconductor.
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