| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies AG |
Quad Driver Incl. Short-Circuit Signaling q q q Short-circuit signaling Four driver circuits for driving power transistors Turn-ON threshold setting from 1.5 to 7 V P-DSO-20-7 Type FZL 4146 G General Description Ordering Code Q67000-H8743 Package P-DSO-20-7 (SMD) The IC comprises four |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 67 -4.7 P-TSOP6-6 V mΩ A 4 5 6 3 2 1 Type BSL211SP Package P-TSOP6-6 Ordering Cod |
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Infineon Technologies AG |
SIPMOS Small-Signal Transistor K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- sour |
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Infineon Technologies |
Signal Processing Subscriver Line Interface Codec Filter |
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Infineon Technologies |
IGBT • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC101T170R3 VCE 1700V IC |
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Infineon Technologies |
IGBT • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • chip only Applications: • drives G E Chip Type SIGC104T170R2C VCE 1700V ICn 50A Die Size 10.12 x 10.18 |
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Infineon Technologies |
IGBT • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Ordering Code |
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Infineon Technologies |
IGBT • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC42T |
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Infineon Technologies |
IGBT • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Modules Applications: • drives G E Chip Type SIGC42T60NC VCE 600V ICn 50A Die Size 6.5 x 6.5 mm2 Package sawn on foil O |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21 BSL302SN Product Summary VDS RDS(on),max |
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Infineon Technologies |
Small-Signal-Transistor • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002DW Product Summary VDS RDS(on),max ID VGS=10 V |
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Infineon Technologies AG |
OptiMOS-P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS R DS(on) ID SC-75 -20 1.2 -0.39 V Ω A Drain pin 3 Type BSA 223SP Package SC-75 Ordering Code Q67 |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated • Qualified according to AEC Q101 • Halogen free according to IEC61249221 Type BSL307SP Package Tape and reel Marking PG-TSOP-6-1 H6327: |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S S S G 1 2 3 4 Top View Product Summary VDS RDS(on) ID -20 8 -14.9 V mΩ A 8 7 6 5 D D D D SIS00062 Type BSO201SP Pac |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 G1 S2 G2 1 2 3 4 Top View Product Summary VDS RDS(on) ID 8 7 6 5 -20 21 -8.2 V mΩ A D1 D1 D2 D2 SIS00070 Type BSO20 |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • Dual P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 G1 S2 G2 1 2 3 4 Top View Product Summary VDS RDS(on) ID 8 7 6 5 -20 67 -4.7 V mΩ A D1 D1 D2 D2 SIS00070 Type |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor • N-channel • Depletion mode • dv /dt rated Product Summary V DS R DS(on),max I DSS,min 200 3.5 0.14 V Ω A SOT-223 Type BSP149 Package SOT-223 Ordering Code Q67000-S071 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP149 Maximum rat |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Product Summary VDS R DS(on) ID -60 0.3 -1.9 SOT-223 4 V Ω A 3 2 1 VPS05163 Drain pin 2 Type BSP 170 P Package SOT-223 Ordering Code Q67041-S4018 Gate pin1 Source pin 3 Maximum R |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor Product Summary • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 4 Pin 1 Pin2/4 PIN 3 • Qualified according to AEC Q101 G |
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Infineon Technologies AG |
SIPMOS Small-Signal Transistor -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min |
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Desde 2024. D4U Semiconductor.
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