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Infineon Technologies AG |
IPP15N03L • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating t |
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
Power-Transistor Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA=:42 D:@? C Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"\[# Q F2 =2 ? 496 D6CD65 Q) 3 7B66 A=2 D:? 8 |
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Infineon Technologies |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free |
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Infineon Technologies |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% A |
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Infineon Technologies |
Power Transistor • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
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Infineon Technologies |
Power-Transistor Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summar |
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Infineon Technologies |
Power-Transistor • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPP050N06N G IPB050N06N G Product Summary V DS R DS(on),max SMDve |
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Infineon Technologies |
Power-Transistor • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 11.7 75 V mΩ |
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Infineon Technologies AG |
IPP10N03L • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating te |
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Infineon Technologies AG |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Av |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB22N03S4L-15 |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
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Infineon Technologies |
Power Transistor • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
Power-Transistor • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N04S2L-03 IPP80N04S2L-03 Product Su |
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Infineon Technologies |
Power-Transistor • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-H5 IPP80N06S2L-H5 Product Su |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2-05 IPP80N06S2-05 Product Summary V DS R D |
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Infineon Technologies |
Power-Transistor T # 6H $ 9 ' =H " ) =H % `[` ( 8 T ( V ( _`S )#$ , - 1>4 $ , *# , 55 697EB5 6? B=? B5 45D19<54 9>6? B=1D9? > +# , 55 697EB5 6? B=? B5 45D19<54 9>6? B=1D9? Z + 5F @175 DHS[L 0( 0( +*( +/( q*( |
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Desde 2024. D4U Semiconductor.
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