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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Product Summary V DS |
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Infineon Technologies AG |
Power Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature IPD09N03LA IPF |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Product Summary V DS |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
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Infineon Technologies |
Power-Transistor DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.5 page 1 2006-05-15 IPD12N03LB G IPU12N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, |
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Infineon Technologies |
Fast switching MOSFET • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanch |
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Infineon Technologies |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalan |
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Infineon Technologies |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
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Infineon Technologies |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalan |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Product Summary V DS |
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Desde 2024. D4U Semiconductor.
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