Infineon Technologies IDD Hoja de datos

No.	parte #	Fabricante	Descripción
1	IDD15E60	Infineon Technologies	Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • L6o0w0VreEvmeritsteerrCecoonvtreorlylecdhtaercghenology • Low forward voltage • 175°C operating temperature • Easy paralleling IDD15E60 Product Summary VRRM IF VF Tjmax 600 15 1.5 175 V
2	IDD04SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •
3	IDD06E60	Infineon Technologies	Fast Switching Emitter Controlled Diode • 600VVEEmmitCteornCteocnhtrnoollleodgytechnology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling IDD06E60 Product Summary VRRM IF VF Tjmax 600 V 6 A 1.5 V
4	IDD09SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •
5	IDD04E120	Infineon Technologies	Fast Switching EmCon Diode • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax 1200 4 1.65 150 V A V °C PG-TO220-2-2. • Easy paralleling Type IDP04E120 Package
6	IDD05SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •
7	IDD06SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •
8	IDD08SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •
9	IDD23E60	Infineon Technologies	Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax 600 23 1.5 175 V A V °C • 175°C operating temperature • Easy paralleling Type IDD23
10	IDD03E60	Infineon Technologies	Fast Switching Emitter Controlled Diode G265BC5:CC:A2D:@? T'C8= 90KC O'p8e4r2a)tign8g junction temperature S)toAra6gB2eDt:e? m8p2e?ra5tuCreD@B286 D6> A6B2DEB6 S-o@ld=5er6inBg:? t8emD6p>erAat6uBr2eDEB6 1/.(6)m,.m1(!00..0,6'3(i/n+-.)*fr"o!%m&ca$s#e for 10 s (HHVCR R M "< IF "
11	IDD03SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •
12	IDD04S60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl
13	IDD09E60	Infineon Technologies	Fast Switching Emitter Controlled Diode • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling IDD09E60 Product Summary VRRM 600 IF VF Tjmax 9 1.5 175 V A V °C PG-TO2
14	IDD10SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •
15	IDD12SG60C	Infineon Technologies	Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant •