| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 1 MHz Differential forward resistance IF = 10mA / 50mA RF 5.5 CT 0.22 0.35 pF Symbol min. V(BR) VF 0.36 0.48 4 Values typ. max. - Unit V 0.43 0.55 0.52 0.66 2 Feb-03-2003 BAT14... Diode capacitance CT = (VR ) f = 1MHz 0.5 pF Reverse c |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 67 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAT15-02L, BAT15-02V BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099R 1For Symbol VR IF Ptot Value 4 110 100 1 |
|
|
|
|
Infineon Technologies AG |
Silicon RF Switching Diode - 20 - - 200 VF - 0.92 1.2 AC Characteristics Diode capacitance VR = 20 V, f = 1 MHz CT Forward resistance IF = 5 mA, f = 100 MHz rf Charge carrier life time τ rr IF = 10 mA, IR = 6 mA, measured at IR = 3 mA , RL = 100 Ω I-region width WI |
|
|
|
|
Infineon Technologies |
(BATxx-xxx) Microwave RF & Tuner Diodes |
|
|
|
|
Infineon Technologies |
(BATxx-xxx) Microwave RF & Tuner Diodes |
|
|
|
|
Infineon Technologies |
(BATxx-xxx) Microwave RF & Tuner Diodes |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diodes 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 67 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAT15-02L, BAT15-02V BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099R 1For Symbol VR IF Ptot Value 4 110 100 1 |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode l Resistance Parameter Junction - soldering point1) BAT17 BAT17-04, BAT17-07 BAT17-05 BAT17-04W, BAT17-05W, BAT17-06W Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 4 130 150 150 150 150 150 150 - |
|
|
|
|
Infineon Technologies AG |
Silicon RF Switching Diode |
|
|
|
|
Infineon Technologies AG |
Silicon RF Switching Diode - 20 - - 200 VF - 0.92 1.2 AC Characteristics Diode capacitance VR = 20 V, f = 1 MHz CT Forward resistance IF = 5 mA, f = 100 MHz rf Charge carrier life time τ rr IF = 10 mA, IR = 6 mA, measured at IR = 3 mA , RL = 100 Ω I-region width WI |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode C Characteristics Reverse current VR = 25 V VR = 25 V, TA = 85 °C Forward voltage I F = 10 mA I F = 100 mA IF = 1 A VF 0.28 0.35 0.47 0.35 0.6 IR 10 1000 V Unit µA AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz CT - 30 40 pF 2 Fe |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 1 MHz Differential forward resistance IF = 10mA / 50mA RF 5.5 CT 0.22 0.35 pF Symbol min. V(BR) VF 0.36 0.48 4 Values typ. max. - Unit V 0.43 0.55 0.52 0.66 2 Feb-03-2003 BAT14... Diode capacitance CT = (VR ) f = 1MHz 0.5 pF Reverse c |
|
|
|
|
Infineon Technologies AG |
Silicon Schottky Diode 15-099, TS ≤ 48 °C BAT15-099R, TS ≤ 67 °C VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Thermal Resistance Parameter Junction - soldering point1) BAT15-02ELS BAT15-02EL BAT15-03W BAT15-04W BAT15-05W |
|
Desde 2024. D4U Semiconductor.
|