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Infineon Technologies AG |
NPN Silicon Switching Transistor Array s Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 |
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Infineon Technologies AG |
NPN Silicon High-Voltage Transistor IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector-base cutoff current VCB = 200 V, TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Col |
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Infineon Technologies AG |
PNP Silicon Switching Transistor ristics Collector-emitter breakdown voltage V(BR)CEO 60 - - IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 60 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff cu |
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Infineon Technologies AG |
NPN Silicon Switching Transistor lation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mV °C Unit K/W 1 2012-08-21 SMBT3904...MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. |
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Infineon Technologies AG |
NPN Silicon Switching Transistors lation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mV °C Unit K/W 1 2012-08-21 SMBT3904...MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. |
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Infineon Technologies AG |
NPN Silicon AF Transistor voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-em |
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Infineon Technologies AG |
NPN Silicon Darlington Transistors emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C |
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Infineon Technologies AG |
NPN/PNP Silicon Switching Transistor Array l Resistance 1 Aug-21-2002 SMBT3904UPN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown |
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Infineon Technologies AG |
PNP Silicon Switching Transistor |
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Infineon Technologies AG |
PNP Silicon Switching Transistors |
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Infineon Technologies AG |
NPN Silicon AF Transistor Array ollector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = |
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Infineon Technologies AG |
PNP Silicon Darlington Transistors 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, |
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Infineon Technologies AG |
Silicon Switching Diode Array 100 V VR = 50 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF 550 670 750 700 820 1000 1100 1250 IR 0.3 0.5 100 mV µA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA |
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Infineon Technologies AG |
NPN/PNP Silicon Switching Transistor Array l Resistance 1 Aug-21-2002 SMBT3904PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown |
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Infineon Technologies AG |
PNP Silicon Switching Transistors |
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Infineon Technologies AG |
PNP Silicon Transistor eakdown voltage IE = 10 µA, IC = 0 Collector -base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0 , TA = 150 °C DC current gain1) IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V Collector-emitter saturation |
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Infineon Technologies AG |
NPN/PNP Silicon AF Transistor Array or calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-21-2002 SMBTA06UPN Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC |
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Infineon Technologies AG |
NPN Silicon Darlington Transistors |
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Infineon Technologies AG |
NPN Silicon High-Voltage Transistors |
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Infineon Technologies AG |
PNP Silicon AF Transistor µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C ICBO ICEO hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 80 80 4 - - 100 20 100 |
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Desde 2024. D4U Semiconductor.
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