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Infineon Technologies AG |
NPN Silicon Switching Transistor ctor cutoff current VCB = 30 V, IE = 0 ICBO ICEV IBEV hFE V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 40 60 6 - - 50 50 50 V nA Collector-emitter cutoff current VCE = 30 V, -VBE = 0.5 V Base-emitter cutoff current VCE = 30 V, -VBE = 0.5 DC curr |
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Infineon Technologies AG |
NPN Silicon Darlington Transistors eakdown voltage IC = 100 µA, VBE = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter |
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Infineon Technologies AG |
NPN Silicon Darlington Transistors Collector-base breakdown voltage IC = 100 µA, IE = 0 Collector-emitter breakdown voltage IC = 100 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C Emitter- |
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Infineon Technologies AG |
NPN Silicon High Voltage Transistor = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 VCB = 200 V, IE = 0 , TA = 150 °C Emitter-base cutoff current VEB = 5 V, IC = 0 |
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Infineon Technologies AG |
PNP Silicon High Voltage Transistor 0 Collector cutoff current VCB = 200 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitte |
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Desde 2024. D4U Semiconductor.
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