Infineon Technologies AG IPW Hoja de datos

No.	parte #	Fabricante	Descripción
1	IPW90R1K2C3	Infineon Technologies AG	CoolMOS Power Transistor • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),
2	IPW60R045CP	Infineon Technologies AG	CoolMOS Power Transistor • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max
3	IPW90R500C3	Infineon Technologies AG	CoolMOS Power Transistor • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),
4	IPW90R800C3	Infineon Technologies AG	CoolMOS Power Transistor • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),