| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies AG |
Silicon Switching Diodes A, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 µs CD 10 pF Symbol min. V(BR) VF IR IR 400 Values typ. max. - Unit V - 1.6 2 1 50 µA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00022 Pulse generator: tp = 10µs, |
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Infineon Technologies AG |
Silicon Switching Diode Array 1.5 Unit max. 1.3 0.2 100 V µA typ. - VF IR IR - pF ns Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Jul- |
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Desde 2024. D4U Semiconductor.
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