Infineon Technologies AG BCW Hoja de datos

No.	parte #	Fabricante	Descripción
1	BCW60FF	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
2	BCW60A	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
3	BCW60C	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
4	BCW60FN	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
5	BCW60	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
6	BCW60B	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
7	BCW60D	Infineon Technologies AG	NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle
8	BCW65	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co
9	BCW65C	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co
10	BCW66H	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co
11	BCW65A	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co
12	BCW65B	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co
13	BCW66	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co
14	BCW66F	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co
15	BCW66G	Infineon Technologies AG	NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co