| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor 53T BCR153U 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 1 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.4 0.5 32 - 47 150 3 100 630 0.3 0.8 1.5 6 |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor tance Parameter Junction - soldering point 1) BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 50 30 100 200 250 250 250 |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR129 BCR129F BCR129L3 BCR129S BCR129T BCR129W SEMH4 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi( |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor 53T BCR153U 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 1 |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor rameter Junction - soldering point 1) BCR158 BCR158F BCR158L3 BCR158T BCR158W SEMB10 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 250 15 |
|
|
|
|
Infineon Technologies AG |
LED Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2 Applications |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor |
|
|
|
|
Infineon Technologies AG |
NPN silicon Digital Transistor haracteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR129 BCR129F BCR129L3 BCR129S BCR129T BCR129W SEMH4 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi( |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR129 BCR129F BCR129L3 BCR129S BCR129T BCR129W SEMH4 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi( |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor ues min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff curre |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor ues min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff curre |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor rameter Junction - soldering point 1) BCR158 BCR158F BCR158L3 BCR158T BCR158W SEMB10 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 250 15 |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol V |
|
|
|
|
Infineon Technologies AG |
PNP Silicon Digital Transistor 2 Aug-29-2003 BCR189... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base break |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor nt VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V I |
|
|
|
|
Infineon Technologies AG |
NPN Silicon Digital Transistor BCR103T BCR103U 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 |
|
Desde 2024. D4U Semiconductor.
|