Infineon Technologies AG BAR Hoja de datos

No.	parte #	Fabricante	Descripción
1	BAR64-03W	Infineon Technologies AG	surface mount RF PIN diode list • Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical) • Very low capacitance C = 0.2 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz • Low forward resistance RF = 2.7 Ω (typical) at forward current IF = 10 mA and freq
2	BAR61	Infineon Technologies AG	Silicon PIN Diode R61... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA IR nA - - 100 - - 1000 VF - 1.05 1.25
3	BAR63-03W	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
4	BAR88	Infineon Technologies AG	Silicon PIN Diode nce Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Symbol RthJS ≤ 65 ≤ 105 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown volt
5	BAR88-099L4	Infineon Technologies AG	Silicon PIN Diode nce Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Symbol RthJS ≤ 65 ≤ 105 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown volt
6	BAR63	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
7	BAR63-04W	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
8	BAR66	Infineon Technologies AG	Silicon PIN Diode Array = 0 V, f = 100 MHz Zero bias conductance VR = 0 V, f = 100 MHz Forward resistance IF = 5 mA, f = 100 MHz Charge carrier life time RL = 100 IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, rf 1.5 0.7 1.8 gP CT 0.4 0.35 220 0.6 0.9 µs pF Unit max. 20
9	BAR88-02V	Infineon Technologies AG	Silicon PIN Diode nce Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Symbol RthJS ≤ 65 ≤ 105 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown volt
10	BAR50	Infineon Technologies AG	Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp
11	BAR50-02L	Infineon Technologies AG	Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp
12	BAR50-02V	Infineon Technologies AG	Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp
13	BAR50-03W	Infineon Technologies AG	Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp
14	BAR50-05	Infineon Technologies AG	Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp
15	BAR63-02L	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
16	BAR63-02V	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
17	BAR63-02W	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
18	BAR63-04	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
19	BAR63-05	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par
20	BAR63-05W	Infineon Technologies AG	Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par