| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon Technologies |
SPP17N80C3 • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
|
|
|
|
Infineon Technologies |
Cool MOS Power Transistor • new revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
|
|
|
|
Infineon Technologies |
Power Transistor · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity P-TO |
|
|
|
|
Infineon Technologies |
SPP17N80C2 · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity P-TO |
|
|
|
|
Infineon Technologies |
Power Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoH |
|
|
|
|
Infineon Technologies |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel • Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Supe |
|
|
|
|
Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
|
|
|
|
Infineon Technologies |
Power Transistor · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Product Summary VDS R DS(on) |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
|
Desde 2024. D4U Semiconductor.
|