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Infineon Technologies AG |
IPP15N03L • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating t |
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Infineon Technologies |
IHW15N120R • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop ® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
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Infineon Technologies |
Reverse conducting IGBT "& 2 T &3 "93"& 3 6#2 99 13T ?"9 9 &"=" 7 122 &31 122 &31 4"33 4"33 8 !71?# 123 $ V[\X ] E E 4+ + . ,. @ . + . . E E O, B+ . E + * #1# #+ K ` . 9 36 3"1# 123 $ E 5"17 =1 ? 7 123 $ / 3 4"33 3T 9T127 123 $ 123 $ &122 &31 &6 2 ! $ &6 9"93 |
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Infineon Technologies |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TRENCHSTOP™ technology for 600V applications offers : |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
Power Transistor • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC PG-TO220-3-31 Type |
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Infineon Technologies |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon Technologies |
CoolMOSTM Power Transistor • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC TO-262-3-1 CoolMOS C |
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Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof |
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Infineon Technologies |
IGBT C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparamete |
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Infineon Technologies |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor • Dual N Channel • BSO 615NV Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.12 3.1 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type BSO 615NV Parameter Continuous |
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Infineon Technologies AG |
Fast IGBT in NPT-technology -55...+150 °C 1) VCE 600V IC 15A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4508 Q67041-A4711 Q67040-S4235 Symbol VCE IC Value 600 31 15 Unit V A ICpul s VGE EAS 62 62 ±20 85 V mJ tSC Ptot 10 139 µs |
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Desde 2024. D4U Semiconductor.
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