| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies |
IPD14N03L • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On-Resistance RDS(on) www.DataSheet4U.com • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature |
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Infineon Technologies AG |
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) • Bi-Directional Transmission in 2nd and 3rd optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure • Class 3 |
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Infineon Technologies AG |
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) • Bi-Directional Transmission in 2nd and 3rd optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure • Class 3 |
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Infineon Technologies AG |
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure |
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Infineon Technologies AG |
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure |
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Infineon Technologies AG |
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure |
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Infineon Technologies AG |
Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in 2nd and 3rd optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well st |
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Infineon Technologies |
Small-Signal-Transistor • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 BSL214N Product Summary VDS RDS(on),max ID VGS=4.5 |
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Infineon Technologies |
Power Transistor • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC6 |
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Infineon Technologies AG |
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks according to FSAN, ITU-T G.983 • Integrated Wavelength Division Multiplexer (WDM) • Bi-Directional Transmission in 2nd and 3rd optical window • Single fiber solution • FP-Laser Diode with Multi-Q |
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Infineon Technologies AG |
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks according to FSAN, ITU-T G.983 • Suitable for OLT applications, 155 Mbit/s and 622 Mbit/s downstream bitrate • Integrated Wavelength Division Multiplexer (WDM) • Bi-Directional Transmission in 2n |
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Infineon Technologies AG |
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure |
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Infineon Technologies AG |
Low Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in 2nd and 3rd optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well st |
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Infineon Technologies AG |
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure |
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Infineon Technologies AG |
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure |
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Infineon Technologies AG |
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in one optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well structure |
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Infineon Technologies AG |
Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving • Designed for application in passive-optical networks • Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter • Bi-Directional Transmission in 2nd and 3rd optical window • Single fiber solution • FP-Laser Diode with Multi-Quantum Well st |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
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Infineon Technologies AG |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS214NW Product Summary V DS R DS(on),max ID V GS=4.5 |
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Desde 2024. D4U Semiconductor.
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