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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor P-Channel Enhancement mode Logic Level www.DataSheet4U.com 175°C operating temperature Avalanche rated dv/dt rated -60 0.25 -9.7 P-TO252 V A Drain pin 2 Type SPD09P06PL SPU09P06PL Package P-TO252 P-TO25 |
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Infineon |
SPD21N05L • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • Logic Level • dv/dt rated • 175˚C operating temperature VDS RDS(on) ID 55 0.04 20 V Ω A Type SPD |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 55 40 29 P- TO252 -3-11 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427 Marking 2N0640 Max |
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Infineon Technologies |
SPP03N60C3 / SPD03N60C3 / SPA03N60C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated www.DataSheet4U.com • Extreme P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 dv/dt rated 1 P-TO220-3-31 2 3 • High peak current capability • Improved transcondu |
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Infineon |
SPD09N05 • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt • 175˚C operating temperature Ty |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity P-TO251 Product Summary VDS RDS(on) ID 600 0.95 4.5 P-TO252 V Ω A Typ |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • I |
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Infineon Technologies |
Power-Transistor • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated . ° Pb-free lead plating; RoHS compliant SPD30N03S2L-07 G Produ |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 30 6.4 50 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • High Current Rating • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Aval |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 55 12.7 50 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421 Marking PN06L13 Maximum Rating |
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Infineon Technologies |
SIPMOS Power Transistor • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 28 V A Enhancement mode RDS(on) 0.023 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature Type SPD28N03 SPU28N0 |
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Infineon Technologies |
SIPMOS Power Transistor • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt Type SPD08N10 SPU08N1 |
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Infineon Technologies |
SPD02N50C3 1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG 60'YHUVLRQGHYLFHRQ3&% #PLQ |
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Infineon |
Wideband RF SPDT Switch |
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Infineon |
0.1 - 6.0 GHz SPDT Switch 2 Product Description 3 Maximum Ratings 4 Operation Ranges 5 RF Characteristics 6 Pin Description 7 Package Information BGS12SL6 7 7 9 9 10 12 12 Data Sheet 4 Revision 1.2 - 2014-05-23 BGS12SL6 List of Figures 1 BGS12SL6 Block Diagram . . . . . . |
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Infineon |
Power-Transistor % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated ´ U g2kwj j qj fi uqfynsl@W tM X htruqnfsy SPD50N03S2-07 G Product Summary V |
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Infineon |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 2.7 W 12 nC • Pb-free lead plating |
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Infineon |
Power Transistor • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • Logic Level • dv/dt rated • 175˚C operating temperature SPD 28N03L VDS RDS(on) ID 30 0.018 30 V |
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Infineon Technologies |
Cool MOS Power Transistor 1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG 60'YHUVLRQGHYLFHRQ3&% #PLQ |
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Infineon Technologies |
Cool MOS Power Transistor OXH ± 1 a) non-Halogen free (OPN: SPD04N50C3BT), Halogen free (OPN: SPD04N50C3AT) 8QLW $ P- $ 9 : & V/ns Rev. 2.7 PDJH 20-05-15 63'1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVOR |
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Desde 2024. D4U Semiconductor.
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