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Infineon S29 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
CY8C4147LQA-S293

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
2
CY8C4147LDA-S293

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
3
S29GL064S

Infineon
64-Mb (8-MB) GL-S MIRRORBIT flash Memory
- Software features
• Advanced sector protection: offers persistent sector protection and password sector protection
• Program Suspend and Resume: read other sectors before programming operation is completed
• Erase Suspend and Resume: read / program
Datasheet
4
CY8C4147LDE-S293

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
5
CY8C4147AZE-S295

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
6
CY8C4147LDS-S293

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
7
CY8C4147LQE-S295

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
8
CY8C4147LQS-S295

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
9
CY8C4147LQA-S295

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
10
CY8C4147LQS-S293

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
11
CY8C4147AZS-S295

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
12
S29GL128S

Infineon
128Mb Flash Memory
a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that
Datasheet
13
S29GL01GS

Infineon
1Gb Flash Memory
a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that
Datasheet
14
S29GL256S

Infineon
256Mb Flash Memory
a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that
Datasheet
15
S29GL01GT

Infineon
1Gb (128MB) GL-T Flash

• 45-nm MIRRORBIT™ technology
• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
• Versatile I/O feature - Wide I/O voltage range (VIO): 1.65 V to VCC
• ×8/×16 data bus
• Asynchronous 32-byte page read
• 512-byte programming buffer - P
Datasheet
16
CY8C4147LQE-S293

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
17
CY8C4147AZA-S295

Infineon
Automotive PSoC 4100S Plus MCU

• Automotive Electronics Council (AEC) AEC-Q100 Qualified
• 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU - Up to 128 KB of flash with Read Accelerator - Up to 16 KB of SRAM - 8-channel DMA engine
• Programmable analog - Two opamps with reconfig
Datasheet
18
IRS2982SPBF

Infineon
LED/SMPS FLYBACK CONTROLLER
Product Summary
 High voltage fast startup
 Voltage mode control
 Critical-conduction / transition mode operation
 Constant voltage / current regulation
 High power factor / low iTHD
 Minimum off time (DCM at light load)
 Burst mode operatio
Datasheet
19
S29GL512S

Infineon
512Mb Flash Memory
a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that
Datasheet
20
S29GL512T

Infineon
512Mb (64MB) GL-T Flash

• 45-nm MIRRORBIT™ technology
• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
• Versatile I/O feature - Wide I/O voltage range (VIO): 1.65 V to VCC
• ×8/×16 data bus
• Asynchronous 32-byte page read
• 512-byte programming buffer - P
Datasheet



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