| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies |
IGBT Type IKP20N60T IKW20N60T Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C www.DataSheet4U.net Symbol VCE IC Value 600 40 20 Unit V A TC = 100°C Pulsed collector current, tp limited by Tjmax Tu |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free |
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Infineon |
IGBT andBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •Qua |
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Infineon |
IGBT C •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature150°C •Shortcircuitwithstandtime5µs •TRENCHSTOPTMandFieldstoptechnologyfor600 |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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Infineon |
IGBT andBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •Maximumjunctiontemperature175°C •Qua |
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Infineon |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature17 |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •comp |
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Infineon |
IGBT C •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature150°C •Dynamicallystresstested •Shortcircuitwithstandtime5µs •Positivetem |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
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Infineon |
IGBT andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastand |
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Infineon |
Diode •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge •Lowforwardvoltageandstableovertemperature •175°Cjunctionoperatingtemperature •E |
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Infineon |
Diode •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge •Lowforwardvoltageandstableovertemperature •175°Cjunctionoperatingtemperature •E |
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Infineon |
IGBT-Module • LowSwitchingLosses • TrenchIGBT3 • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • SolderContactTechnology • Rugged mounting due to integrated mou |
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Infineon Technologies |
Cool MOS Power Transistor DQGVWRUDJHWHPSHUDWXUH Reverse diode dv/dt 7) 6\PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$ ± ± 15 8QLW $ $ P- $ 9 : & V/ |
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Infineon Technologies |
4 Character 5x7 Dot Matrix Series Input ALphanumeric Display • Four 0.150" Dot Matrix Characters • Four Colors: Red, Yellow, High Efficiency Red, Green • Wide Viewing Angle: X Axis +50°, Y Axis +75° • Built-in CMOS Shift Registers with Constant Current LED Row Drivers • Custom Fonts from Shift Registers • Easil |
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Infineon |
SGP20N60 Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C Ptot 179 W tSC 10 µs VGE EAS ±20 115 V mJ ICpuls Symbol VCE IC 40 20 80 80 Value 600 Unit V A VCE 600 |
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Infineon |
Fast S-IGBT in NPT-technology GE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Symbol VC |
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Infineon |
IGBT • LowSwitchingLosses • LowVCEsat • TrenchIGBT3 • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • PressFITContactTechnology • Rugged mounting due to integrated m |
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Infineon |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc |
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Desde 2024. D4U Semiconductor.
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