No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Infineon |
Power MOSFET (A) 5 ID = 100A 4 3 2 TJ = 125°C 1 0 TJ = 25°C 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 600 LIMITED BY PACKAGE 500 400 300 200 100 0 25 50 75 100 125 150 175 TC, Case Tempera |
|
|
|
Infineon |
Power MOSFET Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotiv |
|
|
|
Infineon |
MOSFET urrent (A) Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current Final Datasheet www.infineon.com Please read the important Notice and Warnings at the end of this document V2.2 2019-12-13 IRL100HS121 Ta |
|
|
|
Infineon |
Power MOSFET rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
|
|
|
Infineon |
MOSFET Pack Form Quantity Tube 50 Orderable Part Number IRL3803PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Cu |
|
|
|
Infineon |
Power MOSFET Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1 Benefits Multi-Vendor Compatibility results in Easier Manufacturing Environmentally Friendlier Increase |
|
|
|
Infineon |
Power MOSFET Low RDS(ON) (< 4.7m@ VGS = 4.5V) Low Thermal Resistance to PCB (<1.2°C/W) Low Profile (<0.9mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial |
|
|
|
Infineon |
Power MOSFET Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotiv |
|
|
|
Infineon |
Power MOSFET Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifical |
|
|
|
Infineon |
Power MOSFET Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed |
|
|
|
Infineon |
Power MOSFET Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * |
|
|
|
Infineon |
Power MOSFET Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed |
|
|
|
Infineon |
Power MOSFET |
|
|
|
Infineon |
Power MOSFET e Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. G Gate S D G TO-220 Full-Pak D Drain S Source Base Part Number IRLI530NPbF Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube 50 Orderable Part |
|
|
|
Infineon |
Power MOSFET Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Thermal Resistance S |
|
|
|
Infineon |
Power MOSFET ) ID, Drain Current (A) 1.6 ID = 195A 1.4 1.2 1.0 0.8 TJ = 125°C 0.6 0.4 0.2 TJ = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 700 600 Limited by package 500 400 |
|
|
|
Infineon |
Power MOSFET |
|
|
|
Infineon |
Power MOSFET Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qual |
|
|
|
Infineon |
Power MOSFET Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotiv |
|
|
|
Infineon |
Power MOSFET Advanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotiv |
|