Infineon IRG Hoja de datos

No.	parte #	Fabricante	Descripción
1	IRGP4630D-EPbf	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
2	AUIRGS30B60K	Infineon	INSULATED GATE BIPOLAR TRANSISTOR  Low VCE (on) Non Punch Through IGBT Technology  10µs Short Circuit Capability  Square RBSOA  Positive VCE (on) Temperature Coefficient.  Maximum Junction Temperature rated at 175°C  Lead-Free, RoHS Compliant  Automotive Qualified * * Benefits
3	AUIRGDC0250	Infineon	IGBT  Low VCE (on) Planar IGBT Technology  Low Switching Losses  Square RBSOA  100% of the Parts Tested for ILM  Positive VCE (on) Temperature Coefficient  Reflow Capable per JDSD22-A113  Lead-Free, RoHS Compliant  Automotive Qualified * Benefits
4	IRGP4620D-EPbF	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
5	IRGB4630DPbF	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
6	AUIRGP50B60PD1	Infineon	IGBT  Low VCE(ON) NPT Technology, Positive Temperature Coefficient  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distribution of Parameters  Lead-Free, RoHS Compliant  Automotive Qualif
7	AUIRGSL30B60K	Infineon	INSULATED GATE BIPOLAR TRANSISTOR  Low VCE (on) Non Punch Through IGBT Technology  10µs Short Circuit Capability  Square RBSOA  Positive VCE (on) Temperature Coefficient.  Maximum Junction Temperature rated at 175°C  Lead-Free, RoHS Compliant  Automotive Qualified * * Benefits
8	IRGP4640D-EPbF	Infineon	Insulated Gate Bipolar Transistor E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency
9	IRGB4640DPbF	Infineon	Insulated Gate Bipolar Transistor E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency
10	IRGSL4640DPbF	Infineon	Insulated Gate Bipolar Transistor E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency
11	IRGS4640DPbF	Infineon	Insulated Gate Bipolar Transistor E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency
12	AUIRGPS4070D0	Infineon	INSULATED GATE BIPOLAR TRANSISTOR  Low VCE (on) Trench IGBT Technology  Low Switching Losses  6µs SCSOA  Square RBSOA  100% of the parts tested for ILM   Positive VCE (on) Temperature Coefficient  Soft Recovery Co-pak Diode  Lead-Free, RoHS Compliant  Automotive Qualified *
13	IRGS4620DPbF	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
14	IRGIB4620DPbF	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
15	IRGB4620DPbF	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
16	IRGS4630DPbF	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
17	IRGP4630DPbf	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
18	IRGIB4630DPbF	Infineon	IGBT Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power
19	AUIRGS4062D1	Infineon	IGBT  Low VCE (on) Trench IGBT Technology  Low Switching Losses  5µs short circuit SOA  Square RBSOA  100% of the parts tested for ILM  Positive VCE (on) Temperature Coefficient.  Ultra Fast Soft Recovery Co-pak Diode  Tighter Distribution of Par
20	AUIRGB4062D1	Infineon	IGBT  Low VCE (on) Trench IGBT Technology  Low Switching Losses  5µs short circuit SOA  Square RBSOA  100% of the parts tested for ILM  Positive VCE (on) Temperature Coefficient.  Ultra Fast Soft Recovery Co-pak Diode  Tighter Distribution of Par