Infineon IPW Hoja de datos

No.	parte #	Fabricante	Descripción
1	IPW65R041CFD	Infineon	MOSFET 2 I F 1G. D1 5 / F #2 F 1 5 / F #2 F 1 #2 1 80 F ( 0; 2. $C S ET& 1 ? I F 1G. 1 G. @ Z; = 7 = 1 0; H0 @D 1 11 1 9 2 2 80 2840 I F 1G. I F 1G. F( F 1G. / [/ & > 7 B, !" & 0 H7 K 7 B, !" & KO!]^ _`Qa ^ !" 7 ; %H 7 + 0 7 0H ; H $ 0
2	IPW60R016CM8	Infineon	MOSFET •Suitableforhardandsoftswitchingtopologiesthankstoan  outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Eas
3	IPW65R080CFD	Infineon Technologies	Power Transistor 33 4 I F 6G0 I F G0 34 I F 6G0 / 8 1 F) 4 F6 / 8 1 F) 4 F6 ) 4 6 ;2 F 2= 3 40 %D S ET' 3 A I F 6G0 6 G0 / Z= ?3 : ?3 6 2= H2 33 4 I F 6G0 4 I F 6G0 6 ;2 F 4;72 ! F 6G0 1 [1 ' @ : C- ! "#$ ' 2 H: K : C- ! "#$ 3' KO#]^
4	IPW60R099CPA	Infineon	Power Transistor • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive A
5	IPW65R065C7	Infineon	MOSFET # : /V 2B =% + % Z $ 2B& : .% % 0 7 %7 D% I 7 ; %7 - 0 ; 0 7 %7 7 87 9& =' 7 %7 ;% % 0- 7 " ! / / KLMNOP 3Q 3QR / QR 7 87 S 9 WXW WXW K OWY 11 / / KLMNOP 7 87 7 ]87 # $% ! ! 9E 2 J G 1H. J G H. 12 J G 1H. E1 5 / G @ @2 G1 E 5 / G
6	IPW65R080CFDA	Infineon Technologies	MOSFET D) D) W9 ;, 4 ;, +9 E+ , , . 7F C D) . 7F C D) 5+ C 7B C D) * X* 6 .51+ + ? ! ! < 4 ?' 7B Z[\ ! + E4 H 4 ?' 7B Z[\ ,! 4 9 E + 4 4 & + 4 +E 9 E 4 9 O + && && '( ) " 7 ++ 9 ] 9 7 ++ 9 ] 9 4& ( E 4 4+ E 9+ ? +4 & S^_F S^_M ' 7K
7	IPW60R037CM8	Infineon	MOSFET •Suitableforhardandsoftswitchingtopologiesthankstoan  outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Eas
8	IPW90R1K2C3	Infineon Technologies AG	CoolMOS Power Transistor • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),
9	IPW60R099P6	Infineon Technologies	MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord
10	IPW60R041C6	Infineon Technologies	MOSFET << GC8K@E> & 8CF> - 4 * JK8> - 4 * JK8> - ! 0 @CM?K@E> 0
11	IPW60R041P6	Infineon	MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord
12	IPW60R045CPA	Infineon	Power Transistor • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive A
13	IPW60R120P7	Infineon	MOSFET •Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding  commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductsco
14	IPW60R120C7	Infineon	MOSFET •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)EossandRDS(on)Qg •BestinclassRDS(on)/package •Qualifiedforindustri
15	IPW65R190C7	Infineon	MOSFET •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)EossandRDS(on)Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb-freeplating,halogenfreemoldcompound •Qualifiedforindustrialgradeapplicati
16	IPW60R099CP	Infineon Technologies	Power Transistor ( = - == 3 - =L 3 $ 6I: HDJG8: KDAI6<: - @L deReZT . % O - DL: G9>HH>E6I>DC ) e`e , < Y , E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG: , [ , deX * DJCI>C< IDGFJ: * 6C9 * H8G: LH DHS[L ,* 2 2, 1)) '+ *
17	IPW60R299CP	Infineon Technologies	CoolMOS Power Transistor • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max
18	IPW60R045CP	Infineon Technologies AG	CoolMOS Power Transistor • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max
19	IPW65R019C7	Infineon Technologies	Power Transistor •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)EossandRDS(on)Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb-freeplating,halogenfreemoldcompound •Qualifiedforindustrialgradeapplicati
20	IPW65R110CFD	Infineon	MOSFET < 0V 2C ?& + & Z % < 2C' /& & 1 8 &8 E& I 8 = &8 - 1 = 1 8 &8 8 98 ;' ? ( 8 &8 =& & 1- 8 " ! 0 0 KLMNOP 3Q 3QR 0 QR 8 98 S ; WXW WXW K OWY :: 0 0 KLMNOP 8 98 8 ]98 # $% !! ; 2 J G :H/ $ J G H/ 2 J G :H/ .4: 6 0 G 2 G : ; 6 0 G 2 G: 2 :