Infineon IMZ Hoja de datos

No.	parte #	Fabricante	Descripción
1	IMZA65R027M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQrr •Superiorgateoxidereliability •Bestthermalconductivityandbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increasedava
2	IMZ120R030M1H	Infineon	Silicon Carbide MOSFET  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Te
3	IMZA120R014M1H	Infineon	MOSFET • VDSS = 1200 V at Tvj = 25°C • IDDC = 127 A at Tc = 25°C • RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn
4	IMZA75R020M1H	Infineon	MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
5	IMZA75R090M1H	Infineon	MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
6	AIMZA75R060M1H	Infineon	Automotive MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
7	IMZA65R107M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQrr •Superiorgateoxidereliability •Bestthermalconductivityandbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increasedava
8	IMZA75R040M1H	Infineon	MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
9	IMZA65R015M2H	Infineon	MOSFET •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperatio
10	IMZA75R027M1H	Infineon	MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
11	IMZA65R007M2H	Infineon	MOSFET •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperatio
12	AIMZA75R090M1H	Infineon	Automotive MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
13	IMZ120R045M1	Infineon	1200V SiC Trench MOSFET  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for
14	IMZA75R060M1H	Infineon	MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
15	AIMZA75R020M1H	Infineon	MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
16	IMZA75R016M1H	Infineon	MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin
17	IMZA65R020M2H	Infineon	MOSFET •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperatio
18	IMZA65R050M2H	Infineon	MOSFET •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperatio
19	IMZ120R060M1H	Infineon	1200V SiC Trench MOSFET  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Te
20	IMZ120R220M1H	Infineon	MOSFET  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Te