Infineon IMT Hoja de datos

No.	parte #	Fabricante	Descripción
1	IMTA65R060M2H	Infineon	SiC MOSFET • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operatio
2	IMT40R015M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
3	IMT65R083M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased
4	IMT40R011M2H	Infineon	400V G2 MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
5	IMTA65R020M2H	Infineon	SiC MOSFET • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operatio
6	IMTA65R050M2H	Infineon	SiC MOSFET • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operatio
7	IMT40R036M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
8	IMT40R025M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
9	IMT65R048M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased
10	IMT40R045M2H	Infineon	400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to
11	IMT65R072M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased
12	IMT65R057M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased
13	IMT65R107M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased
14	IMT65R030M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased
15	IMT65R039M1H	Infineon	MOSFET •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increased